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(R)
STPS160H100TV
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS
n n n n
2 x 80 A 100 V 150 C 0.68 V
K1 A1 K2 A2
n n n
n
NEGLIGIBLE SWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP AVALANCHE RATED LOW INDUCTION PACKAGE INSULATED PACKAGE: Insulating Voltage = 2500 V(RMS) Capacitance = 45 pF AVALANCHE CAPABILITY SPECIFIED
ISOTOPTM
DESCRIPTION High voltage dual Schottky rectifier designed for high frequency telecom and computer Switched Mode Power Supplies and other power converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt *: RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 110C = 0.5 Per diode Per device Parameter Repetitive peak reverse voltage Value 100 180 80 160 1000 2 10 78400 - 55 to + 150 150 10000 Unit V A A A A A W C C V/s Packaged in ISOTOP, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses and low noise are required.
tp = 10 ms sinusoidal tp = 2 s square F = 1kHz tp = 100 s square tp = 1s Tj = 25C
dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a )
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July 2003 - Ed: 3A
STPS160H100TV
THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF** Parameter Reverse leakage Current Forward Voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Pulse test : * tp = 5 ms, < 2% ** tp = 380 s, < 2%
Parameter Junction to case Per leg Total Coupling
Value 0.9 0.5 0.14
Unit C/W C/W C/W
Min.
Typ. 13
Max. 40 50 0.75 0.63 0.80 0.68 0.87 0.74 0.92 0.80
Unit A mA V
VR = VRRM IF = 60 A IF = 60 A IF = 80 A IF = 80 A IF = 120 A IF = 120 A IF = 160 A IF = 160 A 0.75 0.69 0.63 0.59
To evaluate the conduction losses use the following equation : P = 0.56 x IF(AV) + 0.0015 x IF2(RMS)
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STPS160H100TV
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W) 80 70 60 50 40 30 20 10 0 0 20 IF(av) (A) 40 60
=tp/T
T
Fig. 2: Average forward current versus ambient temperature (=0.5, per diode).
IF(av)(A) 100
= 0.05
= 0.1
= 0.2
= 0.5
Rth(j-a)=Rth(j-c)
80
=1
60 40
T
Rth(j-a)=2C/W
20
tp
=tp/T
tp
Tamb(C) 50 75 100 125 150
80
100
0
0
25
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1s)
1
Fig. 4: Normalized avalanche power derating versus junction temperature.
PARM(tp) PARM(25C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(s)
10 100 1000
Tj(C)
0 0 25 50 75 100 125 150
Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode).
IM(A) 600 500 400 300 200
IM
Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6
= 0.5
Tc=50C
0.4
Tc=90C
t
= 0.2 = 0.1
T
Single pulse
100 0 1E-3
0.2 0.0 1E-3
=0.5
t(s) 1E-2 1E-1 1E+0 1E-2
tp(s) 1E-1
=tp/T
tp
1E+0
5E+0
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STPS160H100TV
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode).
IR(mA) 5E+1 1E+1 1E+0
Tj=125C
Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode) .
C(nF) 10.0
F=1MHz Tj=25C
1.0
1E-1 1E-2 1E-3
Tj=25C
VR(V) 0 10 20 30 40 50 60 70 80 90 100
VR(V) 0.1 1 2 5 10 20 50 100
Fig. 9: Forward voltage drop versus forward current (maximum values, per diode).
IFM(A) 500
Tj=125C
100
Tj=25C
10
VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
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STPS160H100TV
PACKAGE MECHANICAL DATA ISOTOPTM DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S
n n n
Millimeters Min. 11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85 24.80 14.90 12.60 3.50 4.10 4.60 4.00 4.00 30.10 15.10 12.80 4.30 4.30 5.00 4.30 4.40 30.30 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 Typ. Max. Min. 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939
Inches Typ. Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 0.976 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193
Cooling method: C Recommended torque value: 1.3 N.m. Maximum torque value: 1.5 N.m. Ordering type Marking Package ISOTOP Weight 27g without screws Base qty 10 Delivery mode Tube
STPS160H100TV STPS160H100TV
n
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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